Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

(2011) Chang Bum Lee et al.   IEEE ELECTRON DEVICE LETTERS

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{AlO}_{y}$ Incorporation Into $\hbox{HfO}_{x}$ Switching Dielectrics

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

(2011) Z. Fang et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

(2010) Z Fang et al.   IEEE ELECTRON DEVICE LETTERS

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

(2010) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Nonvolatile resistive switching in graphene oxide thin films

(2009) C. L. He et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study

(2008) Naoto Umezawa et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS