Thermochemical resistive switching: materials, mechanisms, and scaling projections

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Thermally formed conducting filaments in a single-crystalline NiO thin film

(2010) Masanori Kawai et al.   APPLIED PHYSICS LETTERS

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(2010) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Reset–Set Instability in Unipolar Resistive-Switching Memory

(2010) Daniele Ielmini   IEEE ELECTRON DEVICE LETTERS

Investigation of State Stability of Low-Resistance State in Resistive Memory

(2010) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Threshold-Switching Delay Controlled by $\hbox{1}/f$ Current Fluctuations in Phase-Change Memory Devices

(2010) Simone Lavizzari et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

(2010) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Resistance switching in a single-crystalline NiO thin film grown on a Pt0.8Ir0.2 electrode

(2009) Masanori Kawai et al.   APPLIED PHYSICS LETTERS

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

(2009) R. Yasuhara et al.   APPLIED PHYSICS LETTERS

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

(2009) D. Kamalanathan et al.   IEEE ELECTRON DEVICE LETTERS

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

(2009) Dong-Jun Seong et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3

(2009) T. Menke et al.   JOURNAL OF APPLIED PHYSICS

Study on the dynamic resistance switching properties of NiO thin films

(2009) C. Kügeler et al.   THIN SOLID FILMS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

The nature of dielectric breakdown

(2008) X. Li et al.   APPLIED PHYSICS LETTERS

Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

(2008) S. H. Chang et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide

(2008) Lakshmi Nagarajan et al.   NATURE MATERIALS

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B