Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

(2013) Yu-Ting Chen et al.   APPLIED PHYSICS LETTERS

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

(2012) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering

(2012) Wei Zhu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

(2012) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The Effect of Silicon Oxide Based RRAM with Tin Doping

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE