Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Published 2015 View Full Article

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Title
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3665-3670
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-09-10
DOI
10.1109/ted.2015.2471835

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