a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbNxfilms

(2015) Hee-Dong Kim et al.   Physica Status Solidi-Rapid Research Letters

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Resistive switching mechanism in silicon highly rich SiOx (x 

(2013) Yuefei Wang et al.   APPLIED PHYSICS LETTERS

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

(2013) Seok Man Hong et al.   IEEE ELECTRON DEVICE LETTERS

Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes

(2013) Akio Ohta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

(2012) Hee-Dong Kim et al.   MICROELECTRONIC ENGINEERING

Electrically tailored resistance switching in silicon oxide

(2012) Adnan Mehonic et al.   NANOTECHNOLOGY

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

(2012) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices

(2012) Xiang Yang et al.   Scientific Reports

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

(2011) Hee-Dong Kim et al.   JOURNAL OF APPLIED PHYSICS

Thermochemical resistive switching: materials, mechanisms, and scaling projections

(2011) Daniele Ielmini et al.   PHASE TRANSITIONS

$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

(2010) Yi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS