Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Published 2015 View Full Article

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Title
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 11, Pages 1138-1141
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-09-08
DOI
10.1109/led.2015.2477163

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