Trilayer Tunnel Selectors for Memristor Memory Cells

Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays

(2015) Ming Wang et al.   Nanoscale

Nanoscale memristive radiofrequency switches

(2015) Shuang Pi et al.   Nature Communications

Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

(2014) Woojin Jeon et al.   ACS Applied Materials & Interfaces

Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

(2014) Jiantao Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

(2013) V. Y.-Q. Zhuo et al.   APPLIED PHYSICS LETTERS

Latch-up based bidirectional npn selector for bipolar resistance-change memory

(2013) Sungho Kim et al.   APPLIED PHYSICS LETTERS

A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

(2013) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Band alignment of rutile and anatase TiO2

(2013) David O. Scanlon et al.   NATURE MATERIALS

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Engineering nonlinearity into memristors for passive crossbar applications

(2012) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

(2011) Ziwen Fang et al.   JOURNAL OF CRYSTAL GROWTH

Atomic Layer Deposition of Tantalum Nitride Using A Novel Precursor

(2011) Shikha Somani et al.   Journal of Physical Chemistry C

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electronic structure and charge transport properties of amorphous Ta2O5 films

(2008) V.A. Shvets et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS