In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed $\hbox{TiO}_{x}$

Resistive Switching Characteristics of Solution-Processed Transparent TiO[sub x] for Nonvolatile Memory Application

(2010) Seungjae Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

A Flexible Solution-Processed Memristor

(2009) N. Gergel-Hackett et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

(2008) Tae-Wook Kim et al.   NANOTECHNOLOGY