Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

Published 2015 View Full Article

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Title
Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices
Authors
Keywords
Resistive switching, Silicon nitride films, Self-rectifying
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 651, Issue -, Pages 340-343
Publisher
Elsevier BV
Online
2015-08-19
DOI
10.1016/j.jallcom.2015.08.082

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