Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off

(2014) Seungjun Kim et al.   ADVANCED MATERIALS

Retention failure analysis of metal-oxide based resistive memory

(2014) Shinhyun Choi et al.   APPLIED PHYSICS LETTERS

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

(2014) S. Gao et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Resolving Voltage–Time Dilemma Using an Atomic-Scale Lever of Subpicosecond Electron–Phonon Interaction

(2014) Xiang Yang et al.   NANO LETTERS

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

(2013) Chao Chen et al.   ACS Applied Materials & Interfaces

The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures

(2013) F. Kurnia et al.   APPLIED PHYSICS LETTERS

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering

(2013) Shi-Hua Huang et al.   Chinese Physics B

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

(2013) G. S. Tang et al.   JOURNAL OF APPLIED PHYSICS

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

(2013) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

Bipolar one diode–one resistor integration for high-density resistive memory applications

(2013) Yingtao Li et al.   Nanoscale

Random telegraph noise and resistance switching analysis of oxide based resistive memory

(2013) Shinhyun Choi et al.   Nanoscale

Conductance quantization in a Ag filament-based polymer resistive memory

(2013) Shuang Gao et al.   NANOTECHNOLOGY

Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

(2013) Yongsung Ji et al.   Nature Communications

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

A Self-Rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode

(2013) W. J. Liu et al.   ECS Solid State Letters

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

(2012) X. A. Tran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

(2012) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(2012) Guangsheng Tang et al.   Nanoscale

Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch

(2012) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Inherent diode isolation in programmable metallization cell resistive memory elements

(2011) Sarath C. Puthentheradam et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

Phase change materials in non-volatile storage

(2011) Daniele Ielmini et al.   Materials Today

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

(2011) Xianwen Sun et al.   Nanoscale Research Letters

Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

(2010) C. Vallée et al.   APPLIED PHYSICS LETTERS

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism

(2010) Y. C. Yang et al.   JOURNAL OF APPLIED PHYSICS

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

(2010) Kuyyadi P Biju et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications

(2009) Tae-Wook Kim et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS