A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Authors
Keywords
-
Journal
NATURE MATERIALS
Volume 10, Issue 8, Pages 625-630
Publisher
Springer Nature
Online
2011-07-11
DOI
10.1038/nmat3070
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
- (2010) L. Goux et al. APPLIED PHYSICS LETTERS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices
- (2010) H. Liu et al. APPLIED PHYSICS LETTERS
- Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering
- (2010) Lijie Zhang et al. IEEE ELECTRON DEVICE LETTERS
- MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications
- (2010) J F Zheng et al. IEEE ELECTRON DEVICE LETTERS
- Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
- (2010) R. Rosezin et al. IEEE ELECTRON DEVICE LETTERS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
- (2009) Kyung Min Kim et al. APPLIED PHYSICS LETTERS
- Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
- (2009) Myoung-Jae Lee et al. NANO LETTERS
- Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
- (2008) S.-E. Ahn et al. ADVANCED MATERIALS
- Direct observation of oxygen movement during resistance switching in NiO/Pt film
- (2008) Chikako Yoshida et al. APPLIED PHYSICS LETTERS
- Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
- (2008) M. J. Lee et al. JOURNAL OF APPLIED PHYSICS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started