A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Title
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Authors
Keywords
-
Journal
NATURE MATERIALS
Volume 10, Issue 8, Pages 625-630
Publisher
Springer Nature
Online
2011-07-11
DOI
10.1038/nmat3070

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