Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
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Title
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 21, Pages 212106
Publisher
AIP Publishing
Online
2015-05-29
DOI
10.1063/1.4921926
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- (2008) Kuan Yew Cheong et al. JOURNAL OF APPLIED PHYSICS
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