标题
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
作者
关键词
-
出版物
Small
Volume 14, Issue 19, Pages 1704062
出版商
Wiley
发表日期
2018-04-18
DOI
10.1002/smll.201704062
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices
- (2018) Alessandro Bricalli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
- (2018) S.V. Tikhov et al. MICROELECTRONIC ENGINEERING
- The Ultra-Low Power Performance of a-SiNx Oy :H Resistive Switching Memory
- (2018) Hui Zhang et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Emulation of synaptic metaplasticity in memristors
- (2017) Xiaojian Zhu et al. Nanoscale
- Nano-cone resistive memory for ultralow power operation
- (2017) Sungjun Kim et al. NANOTECHNOLOGY
- Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
- (2017) Sungjun Kim et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors
- (2017) Chia-Fu Chang et al. Small
- Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices
- (2017) Sungjun Kim et al. RSC Advances
- Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- Graphene and Related Materials for Resistive Random Access Memories
- (2017) Fei Hui et al. Advanced Electronic Materials
- High-Speed and Low-Energy Nitride Memristors
- (2016) Byung Joon Choi et al. ADVANCED FUNCTIONAL MATERIALS
- Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
- (2016) Yao-Feng Chang et al. APPLIED PHYSICS LETTERS
- Sub-10 nm low current resistive switching behavior in hafnium oxide stack
- (2016) Y. Hou et al. APPLIED PHYSICS LETTERS
- Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
- (2016) Sungjun Kim et al. APPLIED PHYSICS LETTERS
- Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si
- (2016) Muxi Yu et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices
- (2016) Hee-Dong Kim et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
- (2016) Zongwei Wang et al. Nanoscale
- Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays
- (2016) Qing Luo et al. Nanoscale
- Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering
- (2016) Zongwei Wang et al. NANOTECHNOLOGY
- 3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications
- (2016) I-Ting Wang et al. NANOTECHNOLOGY
- Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy
- (2016) Yao-Feng Chang et al. PROGRESS IN SOLID STATE CHEMISTRY
- Compact Two-State-Variable Second-Order Memristor Model
- (2016) Sungho Kim et al. Small
- Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor
- (2016) Yu-Chuan Shih et al. RSC Advances
- Fully Si compatible SiN resistive switching memory with large self-rectification ratio
- (2016) Sungjun Kim et al. AIP Advances
- Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide
- (2016) Yao-Feng Chang et al. Scientific Reports
- Trilayer Tunnel Selectors for Memristor Memory Cells
- (2015) Byung Joon Choi et al. ADVANCED MATERIALS
- Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
- (2015) Sungjun Kim et al. APPLIED PHYSICS LETTERS
- Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
- (2015) A. Prakash et al. APPLIED PHYSICS LETTERS
- Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
- (2015) Tsung-Ling Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
- (2015) Ji Chen et al. IEEE ELECTRON DEVICE LETTERS
- Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
- (2015) Umesh Chand et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
- (2015) Sungjun KIM et al. IEICE TRANSACTIONS ON ELECTRONICS
- Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices
- (2015) Hee-Dong Kim et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!
- (2015) Herbert Schroeder JOURNAL OF APPLIED PHYSICS
- Manganite-based memristive heterojunction with tunable non-linear I–V characteristics
- (2015) Hong-Sub Lee et al. Nanoscale
- Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application
- (2015) Shuang Gao et al. Nanoscale
- a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths
- (2015) Xiaofan Jiang et al. Scientific Reports
- Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch
- (2015) Shuang Gao et al. Scientific Reports
- Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
- (2015) Sungjun KIM et al. IEICE TRANSACTIONS ON ELECTRONICS
- Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
- (2015) Rajeswar Panja et al. Nanoscale Research Letters
- Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
- (2014) Sungho Kim et al. ACS Nano
- Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
- (2014) Jung Ho Yoon et al. ADVANCED FUNCTIONAL MATERIALS
- A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
- (2014) Jun Yeong Seok et al. ADVANCED FUNCTIONAL MATERIALS
- Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories
- (2014) An Chen IEEE ELECTRON DEVICE LETTERS
- On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
- (2014) L. Goux et al. JOURNAL OF APPLIED PHYSICS
- Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers
- (2014) Xiaofan Jiang et al. JOURNAL OF APPLIED PHYSICS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations
- (2014) L. Zhao et al. Nanoscale
- Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays
- (2014) Hee-Dong Kim et al. NANOTECHNOLOGY
- Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
- (2014) Yue Bai et al. Scientific Reports
- Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer
- (2013) Hangbing Lv et al. IEEE ELECTRON DEVICE LETTERS
- Nanometer-Scale ${\rm HfO}_{x}$ RRAM
- (2013) Zhiping Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films
- (2013) Seok Man Hong et al. IEEE ELECTRON DEVICE LETTERS
- Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
- (2013) Li Ji et al. NANO LETTERS
- Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process
- (2013) Ju Hyun Park et al. Physica Status Solidi-Rapid Research Letters
- Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides
- (2013) Takeshi Yanagida et al. Scientific Reports
- $\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior
- (2012) Venkatakrishnan Sriraman et al. IEEE ELECTRON DEVICE LETTERS
- In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed $\hbox{TiO}_{x}$
- (2012) Seungjae Jung et al. IEEE ELECTRON DEVICE LETTERS
- A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture
- (2012) X. A. Tran et al. IEEE ELECTRON DEVICE LETTERS
- Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping
- (2012) Zhongrui Wang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
- (2012) Hee-Dong Kim et al. MICROELECTRONIC ENGINEERING
- Failure and reliability analysis of STT-MRAM
- (2012) W.S. Zhao et al. MICROELECTRONICS RELIABILITY
- Electrically tailored resistance switching in silicon oxide
- (2012) Adnan Mehonic et al. NANOTECHNOLOGY
- Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
- (2011) Haowei Zhang et al. APPLIED PHYSICS LETTERS
- Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching
- (2011) Chang Bum Lee et al. IEEE ELECTRON DEVICE LETTERS
- Linear Scaling of Reset Current Down to 22-nm Node for a Novel $\hbox{Cu}_{x}\hbox{Si}_{y}\hbox{O}$ RRAM
- (2011) L. M. Yang et al. IEEE ELECTRON DEVICE LETTERS
- Accurate analysis of parasitic current overshoot during forming operation in RRAMs
- (2011) S. Tirano et al. MICROELECTRONIC ENGINEERING
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Thermochemical resistive switching: materials, mechanisms, and scaling projections
- (2011) Daniele Ielmini et al. PHASE TRANSITIONS
- In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching
- (2010) H.J. Wan et al. IEEE ELECTRON DEVICE LETTERS
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Phase Change Materials and Their Application to Nonvolatile Memories
- (2009) Simone Raoux et al. CHEMICAL REVIEWS
- Electronic structure of memory traps in silicon nitride
- (2009) V.A. Gritsenko et al. MICROELECTRONIC ENGINEERING
- Future challenges of flash memory technologies
- (2008) Chih-Yuan Lu et al. MICROELECTRONIC ENGINEERING
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