Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Title
Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
Authors
Keywords
Memristor, Silicon nitride, Capacitor, Bipolar resistive switching, Small-signal measurements, Light illumination
Journal
MICROELECTRONIC ENGINEERING
Volume 187-188, Issue -, Pages 134-138
Publisher
Elsevier BV
Online
2017-11-07
DOI
10.1016/j.mee.2017.11.002

Ask authors/readers for more resources

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now