Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

(2013) Shimeng Yu et al.   ADVANCED MATERIALS

Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells

(2013) Bogdan Govoreanu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

(2013) P Calka et al.   NANOTECHNOLOGY

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

(2013) Sangsu Park et al.   NANOTECHNOLOGY

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

(2012) Ximeng Guan et al.   IEEE ELECTRON DEVICE LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

(2012) Fabien Alibart et al.   NANOTECHNOLOGY

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Resistance Controllability of $\hbox{Ta}_{2} \hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM for Low-Voltage and Multilevel Operation

(2010) M. Terai et al.   IEEE ELECTRON DEVICE LETTERS

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

(2008) I. K. Yoo et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS