Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
Authors
Keywords
-
Journal
Scientific Reports
Volume 4, Issue 1, Pages -
Publisher
Springer Nature
Online
2014-07-22
DOI
10.1038/srep05780
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
- (2014) Sungho Kim et al. ACS Nano
- Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes
- (2013) Cheng-Lin Tsai et al. ACS Nano
- HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
- (2013) Shimeng Yu et al. ACS Nano
- Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications
- (2013) Ye Zhang et al. APPLIED PHYSICS LETTERS
- Bipolar ${\rm Ni}/{\rm TiO}_{2}/{\rm HfO}_{2}/{\rm Ni}$ RRAM With Multilevel States and Self-Rectifying Characteristics
- (2013) Chung-Wei Hsu et al. IEEE ELECTRON DEVICE LETTERS
- Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer
- (2013) Huaqiang Wu et al. IEEE ELECTRON DEVICE LETTERS
- Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current
- (2013) Takeki Ninomiya et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
- (2013) Byung Joon Choi et al. NANO LETTERS
- Random telegraph noise and resistance switching analysis of oxide based resistive memory
- (2013) Shinhyun Choi et al. Nanoscale
- Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides
- (2013) Takeshi Yanagida et al. Scientific Reports
- Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
- (2013) Sungho Kim et al. Scientific Reports
- Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
- (2013) Shibing Long et al. Scientific Reports
- Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior
- (2012) I. Goldfarb et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate
- (2012) Moon-Sik Seo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices
- (2012) Xiang Yang et al. Scientific Reports
- Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2O3 Nanocomposite/p-Si Diodes
- (2012) Z. Liu et al. ECS Solid State Letters
- Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
- (2011) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now