Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

A candidate Zr-doped Sb2Te alloy for phase change memory application

(2016) Yonghui Zheng et al.   APPLIED PHYSICS LETTERS

Tuning tunnel barrier in Si 3 N 4 -based resistive memory embedding SiO 2 for low-power and high-density cross-point array applications

(2016) Sungjun Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

(2015) Umesh Chand et al.   APPLIED PHYSICS LETTERS

Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

(2015) M. Gottwald et al.   APPLIED PHYSICS LETTERS

Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices

(2015) Jeong Yong Kwon et al.   APPLIED PHYSICS LETTERS

Tuning the resistive switching properties of TiO2−x films

(2015) N. Ghenzi et al.   APPLIED PHYSICS LETTERS

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Switching kinetics of SiC resistive memory for harsh environments

(2015) K. A. Morgan et al.   AIP Advances

Percolation conductivity in hafnium sub-oxides

(2014) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

A New Programming Method to Alleviate the Program Speed Variation in Three-Dimensional Stacked Array NAND Flash Memory

(2014) Yoon Kim et al.   Journal of Semiconductor Technology and Science

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in silicon suboxide films

(2012) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

(2010) S. S. Shaimeev et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Time-dependent electroforming in NiO resistive switching devices

(2009) Gyoung-Ho Buh et al.   APPLIED PHYSICS LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect

(2009) Yu.N. Novikov et al.   MICROELECTRONICS RELIABILITY