High-Speed and Low-Energy Nitride Memristors

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

(2014) Min Ju Yun et al.   JOURNAL OF APPLIED PHYSICS

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

(2013) Chao Chen et al.   ACS Applied Materials & Interfaces

Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch

(2013) Byung Joon Choi et al.   NANO LETTERS

Nitride memristors

(2012) Byung Joon Choi et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5

(2012) Youngbae Ahn et al.   JOURNAL OF APPLIED PHYSICS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

(2011) Mohammad Noman et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer

(2011) Doo-In Kim et al.   APPLIED PHYSICS LETTERS

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

(2011) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

(2011) Hee-Dong Kim et al.   JOURNAL OF APPLIED PHYSICS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures

(2011) Mustafa Alevli et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation

(2011) Qian Lu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

(2011) Cagla Ozgit et al.   THIN SOLID FILMS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

(2010) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

(2010) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Force modulation of tunnel gaps in metal oxide memristive nanoswitches

(2009) Feng Miao et al.   APPLIED PHYSICS LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology