Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

On the Origin of Steep $I$ –$V$ Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

(2015) Alvaro Padilla et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory

(2015) Shintaro Otsuka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage

(2015) Gunuk Wang et al.   NANO LETTERS

Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays

(2015) Ming Wang et al.   Nanoscale

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

(2014) Yuchao Yang et al.   ADVANCED MATERIALS

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

(2014) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

(2014) Rohit S Shenoy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices

(2014) D. S. Hong et al.   Scientific Reports

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

Bipolar one diode–one resistor integration for high-density resistive memory applications

(2013) Yingtao Li et al.   Nanoscale

Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides

(2013) Takeshi Yanagida et al.   Scientific Reports

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment

(2008) Chih-Tsung Tsai et al.   JOURNAL OF APPLIED PHYSICS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS