Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
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Title
Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing
Authors
Keywords
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Journal
Nanoscale
Volume 8, Issue 29, Pages 14015-14022
Publisher
Royal Society of Chemistry (RSC)
Online
2016-04-21
DOI
10.1039/c6nr00476h
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- (2015) M. Prezioso et al. NATURE
- Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
- (2015) Anja Wedig et al. Nature Nanotechnology
- Bioinspired Programming of Memory Devices for Implementing an Inference Engine
- (2015) Damien Querlioz et al. PROCEEDINGS OF THE IEEE
- Memory and Information Processing in Neuromorphic Systems
- (2015) Giacomo Indiveri et al. PROCEEDINGS OF THE IEEE
- Electronic system with memristive synapses for pattern recognition
- (2015) Sangsu Park et al. Scientific Reports
- Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
- (2014) Sungho Kim et al. ACS Nano
- Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element
- (2014) Yuchao Yang et al. ADVANCED MATERIALS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching
- (2014) Ji-Wook Yoon et al. Nanoscale
- Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents
- (2014) Heeyoung Jeon et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Oxide Heterostructure Resistive Memory
- (2013) Yuchao Yang et al. NANO LETTERS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Analog memristive memory with applications in audio signal processing
- (2013) ShuKai Duan et al. Science China-Information Sciences
- On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration
- (2012) Rui Yang et al. ACS Nano
- Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
- (2012) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Complementary resistive switching in tantalum oxide-based resistive memory devices
- (2012) Yuchao Yang et al. APPLIED PHYSICS LETTERS
- Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems
- (2012) Bipin Rajendran et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- (2011) Feng Miao et al. ADVANCED MATERIALS
- Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory
- (2011) Lijie Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
- (2011) Duygu Kuzum et al. NANO LETTERS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Learning Abilities Achieved by a Single Solid-State Atomic Switch
- (2010) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
- (2009) B. Sun et al. JOURNAL OF APPLIED PHYSICS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
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