Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

Nano-cone resistive memory for ultralow power operation

(2017) Sungjun Kim et al.   NANOTECHNOLOGY

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device

(2016) Xinman Chen et al.   APPLIED PHYSICS LETTERS

Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

(2016) Debanjan Jana et al.   APPLIED PHYSICS LETTERS

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

(2016) H. Z. Zhang et al.   APPLIED PHYSICS LETTERS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM

(2016) Jiyong Woo et al.   IEEE ELECTRON DEVICE LETTERS

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

(2016) Stefano Ambrogio et al.   IEEE ELECTRON DEVICE LETTERS

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

(2016) Jiantao Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

(2016) Hao Jiang et al.   JOURNAL OF APPLIED PHYSICS

Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

(2016) Sungjun Kim et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices

(2016) Hee-Dong Kim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

(2016) Sungjun Kim et al.   Nanoscale Research Letters

A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing

(2016) Woorham Bae et al.   NANOTECHNOLOGY

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

(2016) Zongwei Wang et al.   NANOTECHNOLOGY

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

(2016) Fei Zhou et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Revival of “dead” memristive devices: case of WO3−x

(2016) Zheng-Hua Tan et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

(2016) Yao-Feng Chang et al.   PROGRESS IN SOLID STATE CHEMISTRY

Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

(2016) Yu-Chuan Shih et al.   RSC Advances

Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

(2016) Jaesung Park et al.   AIP Advances

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Multifunctional resistive switching behaviors employing various electroforming steps

(2016) Ah Rahm Lee et al.   Journal of Materials Chemistry C

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

(2016) Sungjun Kim et al.   Nanoscale Research Letters

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

(2016) Yao-Feng Chang et al.   Scientific Reports

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

(2015) Yi-Ting Tseng et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

(2015) Umesh Chand et al.   APPLIED PHYSICS LETTERS

Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices

(2015) Jeong Yong Kwon et al.   APPLIED PHYSICS LETTERS

Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

(2015) Yang-Shun Fan et al.   IEEE ELECTRON DEVICE LETTERS

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

(2015) Umberto Celano et al.   Journal of Physical Chemistry Letters

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

(2015) Fei Zhuge et al.   AIP Advances

Physical and chemical mechanisms in oxide-based resistance random access memory

(2015) Kuan-Chang Chang et al.   Nanoscale Research Letters

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

(2015) Meiyun Zhang et al.   Nanoscale Research Letters

Percolation conductivity in hafnium sub-oxides

(2014) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

(2014) Xiaofan Jiang et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Chemical bonding and defect states of LPCVD grown silicon-rich Si3N4 for quantum dot applications

(2014) Shakil Mohammed et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

(2013) C. Chen et al.   APPLIED PHYSICS LETTERS

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Immobilizing Individual Atoms beneath a Corrugated Single Layer of Boron Nitride

(2013) Huanyao Cun et al.   NANO LETTERS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Quantum Conductance in Silicon Oxide Resistive Memory Devices

(2013) A. Mehonic et al.   Scientific Reports

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Resistive switching in silicon suboxide films

(2012) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

(2012) Hee-Dong Kim et al.   MICROELECTRONIC ENGINEERING

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

(2012) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

(2010) Shimeng Yu et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS