The Ultra-Low Power Performance of a-SiNx Oy :H Resistive Switching Memory
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Title
The Ultra-Low Power Performance of a-SiNx
Oy
:H Resistive Switching Memory
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 215, Issue 12, Pages 1700753
Publisher
Wiley
Online
2018-01-10
DOI
10.1002/pssa.201700753
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- (2013) Seok Man Hong et al. IEEE ELECTRON DEVICE LETTERS
- An XPS study on the chemical bond structure at the interface between SiOxNy and N doped polyethylene terephthalate
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