A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

(2013) Cheng-Lin Tsai et al.   ACS Nano

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode

(2013) Seong Keun Kim et al.   APPLIED PHYSICS LETTERS

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

(2013) Sang Woon Lee et al.   COORDINATION CHEMISTRY REVIEWS

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

(2013) G. S. Tang et al.   JOURNAL OF APPLIED PHYSICS

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt

(2013) Kyung Jean Yoon et al.   NANOTECHNOLOGY

Potential Step Coverage for Supercritical Fluid Deposition of TiO2 by Numerical Simulation and Microcavity Analysis

(2013) K. Jung et al.   ECS Solid State Letters

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

(2012) Sang Ho Rha et al.   APPLIED PHYSICS LETTERS

Schottky diode with excellent performance for large integration density of crossbar resistive memory

(2012) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Engineering nonlinearity into memristors for passive crossbar applications

(2012) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

(2012) Jeong Hwan Han et al.   CHEMISTRY OF MATERIALS

Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

(2012) Taeyong Eom et al.   CHEMISTRY OF MATERIALS

Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application

(2012) Seul Ji Song et al.   CHEMISTRY OF MATERIALS

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

(2012) Jeong Hwan Han et al.   CHEMISTRY OF MATERIALS

An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput

(2012) Akifumi Kawahara et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array

(2012) Chun-Li Lo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold resistive and capacitive switching behavior in binary amorphous GeSe

(2012) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Unraveling Metal-insulator Transition Mechanism of VO2Triggered by Tungsten Doping

(2012) Xiaogang Tan et al.   Scientific Reports

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

LAyer Selection by ERase (LASER) With an Etch-Through-Spacer Technique in a Bit-Line Stacked 3-D nand Flash Memory Array

(2011) Jang-Gn Yun et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Three-Dimensional Integration Approach to High-Density Memory Devices

(2011) Hojung Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Adaptive oxide electronics: A review

(2011) Sieu D. Ha et al.   JOURNAL OF APPLIED PHYSICS

Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Capacitors with an Equivalent Oxide Thickness of

(2010) Seong Keun Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Nanoscale imaging and control of resistance switching in VO2 at room temperature

(2010) Jeehoon Kim et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

(2010) Gun Hwan Kim et al.   NANOTECHNOLOGY

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

(2009) Byung Joon Choi et al.   CHEMISTRY OF MATERIALS

Stackable All-Oxide-Based Nonvolatile Memory With $ \hbox{Al}_{2}\hbox{O}_{3}$ Antifuse and $\hbox{p-CuO}_{x}/ \hbox{n-InZnO}_{x}$ Diode

(2009) Seung-Eon Ahn et al.   IEEE ELECTRON DEVICE LETTERS

Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

(2009) Qingyun Zuo et al.   JOURNAL OF APPLIED PHYSICS

Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium

(2009) Viljami Pore et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films

(2009) Kyung Min Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

(2009) Massimiliano Di Ventra et al.   PROCEEDINGS OF THE IEEE

Four-dimensional address topology for circuits with stacked multilayer crossbar arrays

(2009) D. B. Strukov et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

High density 3D memory architecture based on the resistive switching effect

(2009) C. Kügeler et al.   SOLID-STATE ELECTRONICS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

(2008) Bo Soo Kang et al.   ADVANCED MATERIALS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array

(2008) Yong Cheol Shin et al.   APPLIED PHYSICS LETTERS

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

(2008) Huaxiang Yin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES