Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

Published 2012 View Full Article

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Title
Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 98, Issue -, Pages 351-354
Publisher
Elsevier BV
Online
2012-07-27
DOI
10.1016/j.mee.2012.07.052

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