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Title
Sub-10 nm two-dimensional transistors: Theory and experiment
Authors
Keywords
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Journal
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
Volume -, Issue -, Pages -
Publisher
Elsevier BV
Online
2021-09-09
DOI
10.1016/j.physrep.2021.07.006
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Note: Only part of the references are listed.- Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications
- (2021) Yiheng Yin et al. ACS Applied Materials & Interfaces
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- (2021) Shuiyuan Wang et al. Nature Communications
- Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors
- (2021) Qiuhui Li et al. Advanced Theory and Simulations
- Van der waals BP/InSe heterojunction for tunneling field-effect transistors
- (2021) Hong Li et al. Journal of Materials Science
- Promises and prospects of two-dimensional transistors
- (2021) Yuan Liu et al. NATURE
- Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
- (2021) Ruyue Han et al. Science China-Information Sciences
- Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
- (2021) Yangyang Wang et al. REPORTS ON PROGRESS IN PHYSICS
- Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2
- (2021) Xiaolong Xu et al. SCIENCE
- Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction
- (2021) Jiakun Liang et al. Advanced Theory and Simulations
- Record-high saturation current in end-bond contacted monolayer MoS2 transistors
- (2021) Jiankun Xiao et al. Nano Research
- Arsenene: A Potential Therapeutic Agent for Acute Promyelocytic Leukaemia Cells by Acting on Nuclear Proteins
- (2020) Xiuxiu Wang et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
- (2020) Seungho Kim et al. Nature Nanotechnology
- Enhanced carrier mobility and power conversion efficiency of organic solar cells by adding 2D Bi2OS2
- (2020) Chengwen Huang et al. 2D Materials
- Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs
- (2020) Wenhan Zhou et al. Advanced Electronic Materials
- Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart
- (2020) Xiaotian Sun et al. ACS Applied Materials & Interfaces
- Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
- (2020) Lijun Liu et al. SCIENCE
- DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors
- (2020) Mengyu Zhao et al. SCIENCE
- Two-Dimensional Tellurium: Progress, Challenges, and Prospects
- (2020) Zhe Shi et al. Nano-Micro Letters
- Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN
- (2020) Wenhan Zhou et al. Physical Review Applied
- Holey graphite: A promising anode material with ultrahigh storage for lithium-ion battery
- (2020) Chen Yang et al. ELECTROCHIMICA ACTA
- Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation
- (2020) Yuanyuan Pan et al. Physical Review Applied
- Graphene Nanoribbons: On‐Surface Synthesis and Integration into Electronic Devices
- (2020) Zongping Chen et al. ADVANCED MATERIALS
- Toward high-performance monolayer graphdiyne transistor: Strain engineering matters
- (2020) Pengpeng Sang et al. APPLIED SURFACE SCIENCE
- Is graphite nanomesh a promising anode for the Na/K-Ions Batteries?
- (2020) Chen Yang et al. CARBON
- Unveiling the double-well energy landscape in a ferroelectric layer
- (2019) Michael Hoffmann et al. NATURE
- Ferroelectric negative capacitance
- (2019) Jorge Íñiguez et al. Nature Reviews Materials
- Recent progress in 2D Group IV-IV monochalcogenides : synthesis, properties, and applications
- (2019) Ziyu Hu et al. NANOTECHNOLOGY
- Interface engineering for two-dimensional semiconductor transistors
- (2019) Bei Jiang et al. Nano Today
- Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces
- (2019) Lianqiang Xu et al. Journal of Physical Chemistry C
- Sub-10 nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes as an Evaporating Mask
- (2019) Xiaoyang Xiao et al. ACS Applied Materials & Interfaces
- Performance of Monolayer Blue Phosphorene double-gate MOSFETs from First Principles
- (2019) Jin Wang et al. ACS Applied Materials & Interfaces
- Dynamics of Antimonene–Graphene Van Der Waals Growth
- (2019) Matthieu Fortin‐Deschênes et al. ADVANCED MATERIALS
- Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper
- (2019) Li Wang et al. NATURE
- Intrinsic transport properties of nanoporous graphene highly suitable for complementary field-effect transistors
- (2019) Jing Li et al. 2D Materials
- Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors
- (2019) Jiahuan Yan et al. Advanced Electronic Materials
- Electric-field-induced Z 2 topological phase transition in strained single bilayer Bi(111)
- (2019) Hikaru Sawahata et al. Applied Physics Express
- Nanoporous graphene: A 2D semiconductor with anisotropic mechanical, optical and thermal conduction properties
- (2019) Bohayra Mortazavi et al. CARBON
- Direct Chemical Synthesis of Benzyl-Modified Silicane from Calcium Disilicide
- (2019) Masataka Ohashi et al. CHEMISTRY OF MATERIALS
- Large-area graphene-nanomesh/carbon-nanotube hybrid membranes for ionic and molecular nanofiltration
- (2019) Yanbing Yang et al. SCIENCE
- Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene
- (2019) Hong Li et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors
- (2019) Lin Xu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Modern microprocessor built from complementary carbon nanotube transistors
- (2019) Gage Hills et al. NATURE
- Ballistic Quantum Transport of Sub‐10 nm 2D Sb 2 Te 2 Se Transistors
- (2019) Hengze Qu et al. Advanced Electronic Materials
- Planar Direction‐Dependent Interfacial Properties in Monolayer In 2 Se 3 –Metal Contacts
- (2019) Chen Yang et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Thermal conductivity and thermal rectification of nanoporous graphene: A molecular dynamics simulation
- (2019) Farrokh Yousefi et al. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
- Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure
- (2018) Hsuan-An Chen et al. ACS Applied Materials & Interfaces
- Many-Body Effect and Device Performance Limit of Monolayer InSe
- (2018) Yangyang Wang et al. ACS Applied Materials & Interfaces
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- (2018) Xiaotian Sun et al. ACS Applied Materials & Interfaces
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- (2018) Qiuhui Li et al. CARBON
- Interfacial engineering in graphene bandgap
- (2018) Xiaozhi Xu et al. CHEMICAL SOCIETY REVIEWS
- Recent progress in 2D group-VA semiconductors: from theory to experiment
- (2018) Shengli Zhang et al. CHEMICAL SOCIETY REVIEWS
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- (2018) Harshit Agarwal et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- Evolutionary selection growth of two-dimensional materials on polycrystalline substrates
- (2018) Ivan V. Vlassiouk et al. NATURE MATERIALS
- Quantum engineering of transistors based on 2D materials heterostructures
- (2018) Giuseppe Iannaccone et al. Nature Nanotechnology
- Bottom-up synthesis of multifunctional nanoporous graphene
- (2018) César Moreno et al. SCIENCE
- Scalability assessment of Group-IV mono-chalcogenide based tunnel FET
- (2018) Madhuchhanda Brahma et al. Scientific Reports
- Monolayer tellurene–metal contacts
- (2018) Jiahuan Yan et al. Journal of Materials Chemistry C
- Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions
- (2018) Shiqi Liu et al. Journal of Materials Chemistry C
- Two-dimensional III 2 -VI 3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum
- (2018) Pei Zhao et al. Nano Energy
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- (2018) Xing Zhou et al. Advanced Science
- Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties
- (2018) Jingsi Qiao et al. Science Bulletin
- Room temperature in-plane ferroelectricity in van der Waals In 2 Se 3
- (2018) Changxi Zheng et al. Science Advances
- Anisotropic thermal expansion of group-IV monochalcogenide monolayers
- (2018) Jian Liu et al. Applied Physics Express
- Lowering interface state density in carbon nanotube thin film transistors through using stacked Y2O3/HfO2 gate dielectric
- (2018) Lin Xu et al. APPLIED PHYSICS LETTERS
- Sub-10 nm Vertical Tunneling Transistors based on Layered Black Phosphorene Homojunction
- (2018) Hong Li et al. APPLIED SURFACE SCIENCE
- Two-dimensional transistors beyond graphene and TMDCs
- (2018) Yuan Liu et al. CHEMICAL SOCIETY REVIEWS
- Tellurene: its physical properties, scalable nanomanufacturing, and device applications
- (2018) Wenzhuo Wu et al. CHEMICAL SOCIETY REVIEWS
- Sub-5 nm monolayer black phosphorene tunneling transistors
- (2018) Hong Li et al. NANOTECHNOLOGY
- n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors
- (2018) Bowen Shi et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Bi2OS2: A Direct-Gap Two-dimensional Semiconductor with High Carrier Mobility and Surface Electron States
- (2018) Xiwen Zhang et al. Materials Horizons
- Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors
- (2018) Ruge Quhe et al. Physical Review Applied
- Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In 2 Se 3 Nanoflakes down to the Monolayer Limit
- (2018) Fei Xue et al. ADVANCED FUNCTIONAL MATERIALS
- Electric-field-tuned topological phase transition in ultrathin Na3Bi
- (2018) James L. Collins et al. NATURE
- Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
- (2018) Joo Song Lee et al. SCIENCE
- Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
- (2017) Ali Saeidi et al. IEEE ELECTRON DEVICE LETTERS
- Performance Limit Projection of Germanane Field-Effect Transistors
- (2017) AbdulAziz AlMutairi et al. IEEE ELECTRON DEVICE LETTERS
- Negative Capacitance for Boosting Tunnel FET performance
- (2017) Masaharu Kobayashi et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Hydrogenation of silicene films grown on Ag(111)
- (2017) D. Beato Medina et al. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
- Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility
- (2017) Woo Hyun Han et al. Journal of Physical Chemistry Letters
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- (2017) Kai Xu et al. NANO LETTERS
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- (2017) Ajjiporn Dathbun et al. NANO LETTERS
- Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
- (2017) Felicia A. McGuire et al. NANO LETTERS
- Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals
- (2017) Jinxiong Wu et al. NANO LETTERS
- Epitaxial Growth and Band Structure of Te Film on Graphene
- (2017) Xiaochun Huang et al. NANO LETTERS
- Three-layer phosphorene-metal interfaces
- (2017) Xiuying Zhang et al. Nano Research
- Structural phase transition in monolayer MoTe2 driven by electrostatic doping
- (2017) Ying Wang et al. NATURE
- High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
- (2017) Jinxiong Wu et al. Nature Nanotechnology
- Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study
- (2017) Zhili Zhu et al. PHYSICAL REVIEW LETTERS
- Scaling carbon nanotube complementary transistors to 5-nm gate lengths
- (2017) Chenguang Qiu et al. SCIENCE
- Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor
- (2017) Xiao Yan et al. Small
- Imperfect two-dimensional topological insulator field-effect transistors
- (2017) William G. Vandenberghe et al. Nature Communications
- Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials
- (2017) Wenjun Ding et al. Nature Communications
- Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
- (2017) Juan Pablo Llinas et al. Nature Communications
- A microprocessor based on a two-dimensional semiconductor
- (2017) Stefan Wachter et al. Nature Communications
- Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications
- (2017) Shun-Chang Liu et al. Advanced Electronic Materials
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- (2017) Bilu Liu et al. Advanced Electronic Materials
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- (2017) Agnieszka Kuc et al. Advanced Electronic Materials
- A two-dimensional semiconductor transistor with boosted gate control and sensing ability
- (2017) Jing Xu et al. Science Advances
- Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
- (2017) Mingsheng Long et al. Science Advances
- MXene Electrode for the Integration of WSe2and MoS2Field Effect Transistors
- (2016) Jiao Xu et al. ADVANCED FUNCTIONAL MATERIALS
- Ab initio study of carrier mobility of few-layer InSe
- (2016) Chong Sun et al. Applied Physics Express
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- (2016) Yuanyuan Pan et al. CHEMISTRY OF MATERIALS
- Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials
- (2016) Kain Lu Low et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)
- (2016) Le Huang et al. JOURNAL OF CHEMICAL PHYSICS
- Single-Layered Hittorf’s Phosphorus: A Wide-Bandgap High Mobility 2D Material
- (2016) Georg Schusteritsch et al. NANO LETTERS
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- (2016) Jia Lin Zhang et al. NANO LETTERS
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- (2016) Heather M. Hill et al. NANO LETTERS
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- (2016) Amirhasan Nourbakhsh et al. NANO LETTERS
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- (2016) He Tian et al. Nano Research
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- (2016) Yangyang Wang et al. Nanoscale
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- (2016) Kai Xu et al. Nanoscale
- High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
- (2016) Denis A. Bandurin et al. Nature Nanotechnology
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- (2016) Jijun Zhao et al. PROGRESS IN MATERIALS SCIENCE
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- (2016) S. B. Desai et al. SCIENCE
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- (2016) K. S. Novoselov et al. SCIENCE
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- (2016) Giovanni Pizzi et al. Nature Communications
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- (2016) Jangyup Son et al. Nature Communications
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- (2016) G. J. Brady et al. Science Advances
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- (2016) Y. Liu et al. Science Advances
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- (2016) Junga Ryou et al. Scientific Reports
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- (2015) Xian Zhang et al. ACS Applied Materials & Interfaces
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- (2015) M. T. Edmonds et al. ACS Applied Materials & Interfaces
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- (2015) Gaoxue Wang et al. ACS Applied Materials & Interfaces
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- (2015) Jinshui Miao et al. ACS Nano
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- (2015) Ahmet Avsar et al. ACS Nano
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- (2015) Huilong Xu et al. ACS Nano
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- (2015) Tania Roy et al. ACS Nano
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- (2015) Joohoon Kang et al. ACS Nano
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- (2015) Yung-Chang Lin et al. ACS Nano
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- (2015) Enze Zhang et al. ADVANCED FUNCTIONAL MATERIALS
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- (2015) Jiwon Chang et al. APPLIED PHYSICS LETTERS
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- (2015) Fei Liu et al. APPLIED PHYSICS LETTERS
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- (2015) Rostislav A. Doganov et al. APPLIED PHYSICS LETTERS
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- (2015) Damien Voiry et al. CHEMICAL SOCIETY REVIEWS
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- (2015) Ru-Ge Quhe et al. Chinese Physics B
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- (2015) C.-S. Lee et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2015) Wei Cao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2015) Huabing Shu et al. Journal of Physical Chemistry C
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- (2015) Chengyong Xu et al. Journal of Physical Chemistry C
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- (2015) Son D.N. Luu et al. JOURNAL OF SOLID STATE CHEMISTRY
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- (2015) L. Shulenburger et al. NANO LETTERS
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- (2015) Yuanyuan Pan et al. Nanoscale
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- (2015) Deblina Sarkar et al. NATURE
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- (2015) Xu Cui et al. Nature Nanotechnology
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- (2015) Li Tao et al. Nature Nanotechnology
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- (2015) Yufeng Liang et al. PHYSICAL REVIEW LETTERS
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- (2015) J. E. Padilha et al. PHYSICAL REVIEW LETTERS
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- (2015) S. Cho et al. SCIENCE
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- (2015) A. D. Franklin SCIENCE
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- (2015) D.A. Boyd et al. Nature Communications
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- (2015) Hui Pan et al. Scientific Reports
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- (2015) Feng Pan et al. Scientific Reports
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- (2015) Joon-Seok Kim et al. Scientific Reports
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- (2015) M Waqas Iqbal et al. Scientific Reports
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- (2015) Joshua O Island et al. 2D Materials
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- (2014) Han Liu et al. ACS Nano
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- (2014) Wei Feng et al. ADVANCED MATERIALS
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- (2014) Jack R. Brent et al. CHEMICAL COMMUNICATIONS
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- (2014) Kain Lu Low et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2014) Daniel J. R. Appleby et al. NANO LETTERS
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- (2014) Hsun-Jen Chuang et al. NANO LETTERS
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- (2014) Saptarshi Das et al. NANO LETTERS
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- (2014) Lili Yu et al. NANO LETTERS
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- (2014) Asif Islam Khan et al. NATURE MATERIALS
- Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- (2014) Miguel M. Ugeda et al. NATURE MATERIALS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Tunable band gap in germanene by surface adsorption
- (2014) Meng Ye et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
- (2014) Vy Tran et al. PHYSICAL REVIEW B
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- (2014) Jie Guan et al. PHYSICAL REVIEW LETTERS
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- (2014) Zhen Zhu et al. PHYSICAL REVIEW LETTERS
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- (2014) X. Qian et al. SCIENCE
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- (2014) Sefaattin Tongay et al. Nature Communications
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- (2014) Karel-Alexander N. Duerloo et al. Nature Communications
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- (2014) Jingsi Qiao et al. Nature Communications
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- (2013) Elisabeth Bianco et al. ACS Nano
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- (2013) Yufeng Liang et al. APPLIED PHYSICS LETTERS
- Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
- (2013) Cheng Gong et al. APPLIED PHYSICS LETTERS
- First-principles electronic functionalization of silicene and germanene by adatom chemisorption
- (2013) B. van den Broek et al. APPLIED SURFACE SCIENCE
- Graphene-Like Two-Dimensional Materials
- (2013) Mingsheng Xu et al. CHEMICAL REVIEWS
- On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit
- (2013) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Strain Effects To Optimize Thermoelectric Properties of Doped Bi2O2Se via Tran–Blaha Modified Becke–Johnson Density Functional Theory
- (2013) Donglin Guo et al. Journal of Physical Chemistry C
- Stacking Variants and Superconductivity in the Bi–O–S System
- (2013) W. Adam Phelan et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Crystalline–Crystalline Phase Transformation in Two-Dimensional In2Se3 Thin Layers
- (2013) Xin Tao et al. NANO LETTERS
- Carbon nanotube computer
- (2013) Max M. Shulaker et al. NATURE
- The road to carbon nanotube transistors
- (2013) Aaron D. Franklin NATURE
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator
- (2013) Junwei Liu et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
- (2013) Qing Cao et al. Nature Nanotechnology
- Large-Gap Quantum Spin Hall Insulators in Tin Films
- (2013) Yong Xu et al. PHYSICAL REVIEW LETTERS
- Tunable band gap in few-layer graphene by surface adsorption
- (2013) Ruge Quhe et al. Scientific Reports
- Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
- (2012) Weijie Zhao et al. ACS Nano
- GaS and GaSe Ultrathin Layer Transistors
- (2012) Dattatray J. Late et al. ADVANCED MATERIALS
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- (2012) Stefano Larentis et al. APPLIED PHYSICS LETTERS
- Assessment of Electron Mobility in Ultrathin-Body InGaAs-on-Insulator MOSFETs Using Physics-Based Modeling
- (2012) Mirko Poljak et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Sub-10 nm Carbon Nanotube Transistor
- (2012) Aaron D. Franklin et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Giant magnetoresistance in silicene nanoribbons
- (2012) Chengyong Xu et al. Nanoscale
- Topological transistor
- (2012) L. Andrew Wray Nature Physics
- Optimized effective potential using the Hylleraas variational method
- (2012) T. W. Hollins et al. PHYSICAL REVIEW B
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Electrically tunable band gap in silicene
- (2012) N. D. Drummond et al. PHYSICAL REVIEW B
- First-principles studies of the hydrogenation effects in silicene sheets
- (2012) P. Zhang et al. PHYSICS LETTERS A
- Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride
- (2012) Ruge Quhe et al. NPG Asia Materials
- Tunable and sizable band gap in silicene by surface adsorption
- (2012) Ruge Quhe et al. Scientific Reports
- Electronic Structure and Carrier Mobility in Graphdiyne Sheet and Nanoribbons: Theoretical Predictions
- (2011) Mengqiu Long et al. ACS Nano
- Electronic properties of hydrogenated silicene and germanene
- (2011) M. Houssa et al. APPLIED PHYSICS LETTERS
- Electric-Field-Induced Energy Gap in Few-Layer Graphene
- (2011) Kechao Tang et al. Journal of Physical Chemistry C
- Tunable Bandgap in Silicene and Germanene
- (2011) Zeyuan Ni et al. NANO LETTERS
- Academic and industry research progress in germanium nanodevices
- (2011) Ravi Pillarisetty NATURE
- Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
- (2011) Isabelle Ferain et al. NATURE
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
- The origins and limits of metal–graphene junction resistance
- (2011) Fengnian Xia et al. Nature Nanotechnology
- A topological twist for transistors
- (2011) Qi-Kun Xue Nature Nanotechnology
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Quasiparticle energies and excitonic effects of the two-dimensional carbon allotrope graphdiyne: Theory and experiment
- (2011) Guangfu Luo et al. PHYSICAL REVIEW B
- Architecture of graphdiyne nanoscale films
- (2010) Guoxing Li et al. CHEMICAL COMMUNICATIONS
- First-Principles Study of Heat Transport Properties of Graphene Nanoribbons
- (2010) Zhen Wah Tan et al. NANO LETTERS
- Length scaling of carbon nanotube transistors
- (2010) Aaron D. Franklin et al. Nature Nanotechnology
- Graphene nanomesh
- (2010) Jingwei Bai et al. Nature Nanotechnology
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
- (2010) Y.-M. Lin et al. SCIENCE
- Passing Current through Touching Molecules
- (2009) Guillaume Schull et al. PHYSICAL REVIEW LETTERS
- Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium
- (2009) S. Cahangirov et al. PHYSICAL REVIEW LETTERS
- Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
- (2009) D. C. Elias et al. SCIENCE
- High-k/Ge MOSFETs for future nanoelectronics
- (2008) Yoshiki Kamata Materials Today
- Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage
- (2008) Zhiyong Zhang et al. NANO LETTERS
- Negative capacitance to the rescue?
- (2008) Victor V. Zhirnov et al. Nature Nanotechnology
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
- (2008) X. Li et al. SCIENCE
- Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the nonequilibrium Green's function method at the level of first principles theory
- (2007) Woo Youn Kim et al. JOURNAL OF COMPUTATIONAL CHEMISTRY
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
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