Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

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Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Sub-5 nm Monolayer Arsenene and Antimonene Transistors

(2018) Xiaotian Sun et al.   ACS Applied Materials & Interfaces

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

(2018) Guanyu Zhou et al.   ADVANCED MATERIALS

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(2018) Jiahuan Yan et al.   Journal of Materials Chemistry C

Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

(2018) Shiqi Liu et al.   Journal of Materials Chemistry C

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

(2018) Chunsheng Jiang et al.   IEEE Journal of the Electron Devices Society

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(2018) Wenzhuo Wu et al.   CHEMICAL SOCIETY REVIEWS

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

(2018) Ruge Quhe et al.   Physical Review Applied

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Epitaxial Growth and Band Structure of Te Film on Graphene

(2017) Xiaochun Huang et al.   NANO LETTERS

One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport

(2017) Yuchen Du et al.   NANO LETTERS

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study

(2017) Zhili Zhu et al.   PHYSICAL REVIEW LETTERS

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

(2017) Chenguang Qiu et al.   SCIENCE

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Charge trap memory based on few-layer black phosphorus

(2016) Qi Feng et al.   Nanoscale

The role of electronic coupling between substrate and 2D MoS2 nanosheets in electrocatalytic production of hydrogen

(2016) Damien Voiry et al.   NATURE MATERIALS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Performance Upper Limit of sub-10 nm Monolayer MoS2Transistors

(2016) Zeyuan Ni et al.   Advanced Electronic Materials

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

(2015) Yongqing Cai et al.   Journal of Physical Chemistry C

Phosphorene: Fabrication, Properties, and Applications

(2015) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Electronic Structure and the Properties of Phosphorene and Few-Layer Black Phosphorus

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(2015) Adrien Allain et al.   NATURE MATERIALS

Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors

(2015) Yufeng Liang et al.   PHYSICAL REVIEW LETTERS

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

Asymptotic Description of the Time and Temperature Hysteresis in the Framework of Landau-Khalatnikov Equation

(2014) A. Starkov et al.   FERROELECTRICS

Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure

(2014) Weiwei Gao et al.   NANO LETTERS

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

(2014) Joshua D. Wood et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

(2013) Yi Zhang et al.   Nature Nanotechnology

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

(2012) Giovanni A. Salvatore et al.   APPLIED PHYSICS LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Stability, Electronic Structure, and Optical Property of Surface Passivated Silicon Nanowires: Density Functional Calculation

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Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

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