Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 22, Pages 223104
Publisher
AIP Publishing
Online
2012-11-27
DOI
10.1063/1.4768218
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
- (2012) Dattatray J. Late et al. ADVANCED FUNCTIONAL MATERIALS
- Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses
- (2012) S. Najmaei et al. APPLIED PHYSICS LETTERS
- Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
- (2012) Wan Sik Hwang et al. APPLIED PHYSICS LETTERS
- Small-signal amplifier based on single-layer MoS2
- (2012) Branimir Radisavljevic et al. APPLIED PHYSICS LETTERS
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
- (2012) C. Ataca et al. Journal of Physical Chemistry C
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
- (2012) Hee Sung Lee et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Observation of infrared-active modes in Raman scattering from topological insulator nanoplates
- (2012) Rui He et al. NANOTECHNOLOGY
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- Optical Identification of Single- and Few-Layer MoS2 Sheets
- (2012) Hai Li et al. Small
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Graphene analogues of layered metal selenides
- (2011) H. S. S. Ramakrishna Matte et al. DALTON TRANSACTIONS
- Visibility of dichalcogenide nanolayers
- (2011) M M Benameur et al. NANOTECHNOLOGY
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature
- (2011) Hai Li et al. Small
- Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors
- (2009) En-Shao Liu et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Nanomaterials based on molybdenum diselenide
- (2009) Rabin Bissessur et al. MATERIALS CHEMISTRY AND PHYSICS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search