MoS2 transistors with 1-nanometer gate lengths

The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate Transistors

(2015) Woo-Suhl Cho et al.   IEEE ELECTRON DEVICE LETTERS

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part II: Extrinsic Elements, Performance Assessment, and Design Optimization

(2015) Chi-Shuen Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Nanomaterials in transistors: From high-performance to thin-film applications

(2015) A. D. Franklin   SCIENCE

Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures

(2015) Xiaolong Chen et al.   Nature Communications

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

(2014) Darshana Wickramaratne et al.   JOURNAL OF CHEMICAL PHYSICS

Atomically thin p–n junctions with van der Waals heterointerfaces

(2014) Chul-Ho Lee et al.   Nature Nanotechnology

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

(2014) H. Fang et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

The valley Hall effect in MoS2 transistors

(2014) K. F. Mak et al.   SCIENCE

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates

(2013) Houk Jang et al.   NANO LETTERS

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Nanowire transistors without junctions

(2010) Jean-Pierre Colinge et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

It's Time to Reinvent the Transistor!

(2010) T. N. Theis et al.   SCIENCE

Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes

(2009) N. Patil et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films

(2008) Gang Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D Simulation

(2008) Hui Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

(2008) Yang Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay

(2008) J Svensson et al.   NANOTECHNOLOGY