Assessment of Electron Mobility in Ultrathin-Body InGaAs-on-Insulator MOSFETs Using Physics-Based Modeling

Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

(2011) Masafumi Yokoyama et al.   Applied Physics Express

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

(2011) Hock-Chun Chin et al.   IEEE ELECTRON DEVICE LETTERS

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

(2011) L. Donetti et al.   JOURNAL OF APPLIED PHYSICS

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

(2011) Mirko Poljak et al.   SOLID-STATE ELECTRONICS

Hole transport in DGSOI devices: Orientation and silicon thickness effects

(2010) L. Donetti et al.   SOLID-STATE ELECTRONICS

Ultra-high aspect-ratio FinFET technology

(2010) Vladimir Jovanović et al.   SOLID-STATE ELECTRONICS

Improving bulk FinFET DC performance in comparison to SOI FinFET

(2009) Mirko Poljak et al.   MICROELECTRONIC ENGINEERING

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Band-Structure Effects on the Performance of III–V Ultrathin-Body SOI MOSFETs

(2008) Yang Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES