Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep09075
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [11274016, 51072007, 61471301]
- National Basic Research Program of China [2013CB932604, 2012CB619304]
- National Foundation for Fostering Talents of Basic Science [J1030310/J1103205]
- Program for New Century Excellent Talents in University of MOE of China
- Special Fund of Education Department of Shaanxi Province, China [2013JK0635]
Ask authors/readers for more resources
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the widthW of the wall between the neighboring holes is even. The size of the band gap increases with the reducedW and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
