Ballistic Quantum Transport of Sub-10 nm 2D Sb2Te2Se Transistors

2D materials, due to their ultrathin dangling-bond-free configuration and excellent electrostatic control, have potential as possible Si-alternative building blocks for future competitive devices. Exploring 2D electronic materials with suitable band gap and high mobility is key to designing ultra-scaled devices. The electronic properties and device performance of sub-10 nm 2D Sb2Te2Se are studied by ab initio quantum-transport simulations. The results show that 2D Sb2Te2Se, a stable system, possesses an indirect bandgap of 1.01 eV and high electron mobility exceeding 10(3) cm(2) V-1 s(-1). Through comparing with the ballistic quantum transports of Sb2Te2Se, the n-metal-oxide-semiconductor field-effect transistor (MOSFET) exhibits better device performance than p-MOSFET. In particular, not only can the on-current of n-MOSFET with gate length L-g = 9 nm reach as high as 1660 mu A mu m(-1), but its other figures of merit including gate capacity (0.72 fF mu m(-1)), delay time (0.31 ps), and power dissipation (0.37 fJ mu m(-1)) also satisfy the International Technology Roadmap for Semiconductors 2020 requirements. Therefore, 2D Sb2Te2Se could become a potential electronic material for next-generation nanodevices.