Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene

Published 2019 View Full Article

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Title
Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 34, Issue 8, Pages 085006
Publisher
IOP Publishing
Online
2019-06-27
DOI
10.1088/1361-6641/ab2cd8

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