Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance

Title
Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 3, Pages 1211-1216
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-01-20
DOI
10.1109/ted.2018.2790349

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