Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect

Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain

(2018) Chaoyu Song et al.   ACS Applied Materials & Interfaces

InSe: a two-dimensional material with strong interlayer coupling

(2018) Yuanhui Sun et al.   Nanoscale

Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain

(2017) Hao Jin et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Topology-Scaling Identification of Layered Solids and Stable Exfoliated 2D Materials

(2017) Michael Ashton et al.   PHYSICAL REVIEW LETTERS

Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets

(2016) Jannika Lauth et al.   CHEMISTRY OF MATERIALS

Strain-Induced Isostructural and Magnetic Phase Transitions in Monolayer MoN2

(2016) Yao Wang et al.   NANO LETTERS

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

(2016) Mauro Brotons-Gisbert et al.   NANO LETTERS

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

Thickness-dependent carrier transport and optically enhanced transconductance gain in III-VI multilayer InSe

(2016) Ching-Hwa Ho   2D Materials

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

(2015) Garry W. Mudd et al.   ADVANCED MATERIALS

Two-Dimensional Indium Selenides Compounds: An Ab Initio Study

(2015) L. Debbichi et al.   Journal of Physical Chemistry Letters

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

(2015) Sukrit Sucharitakul et al.   NANO LETTERS

Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

(2015) Aaditya Manjanath et al.   NANOTECHNOLOGY

Highly anisotropic and robust excitons in monolayer black phosphorus

(2015) Xiaomu Wang et al.   Nature Nanotechnology

Silicene field-effect transistors operating at room temperature

(2015) Li Tao et al.   Nature Nanotechnology

Performance improvement of multilayer InSe transistors with optimized metal contacts

(2015) Wei Feng et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe

(2015) Ting Cao et al.   PHYSICAL REVIEW LETTERS

Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

(2015) Wengang Luo et al.   Advanced Optical Materials

Environmental instability of few-layer black phosphorus

(2015) Joshua O Island et al.   2D Materials

Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

(2014) Sidong Lei et al.   ACS Nano

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

Edge-Oriented MoS2Nanoporous Films as Flexible Electrodes for Hydrogen Evolution Reactions and Supercapacitor Devices

(2014) Yang Yang et al.   ADVANCED MATERIALS

Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons

(2014) Yongqing Cai et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response

(2014) Srinivasa Reddy Tamalampudi et al.   NANO LETTERS

Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

(2014) Michele Buscema et al.   NANO LETTERS

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

(2014) Ruixiang Fei et al.   NANO LETTERS

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

(2014) Juan F. Sánchez-Royo et al.   Nano Research

Electronic and optical excitations of the PTB7 crystal: First-principles GW-BSE calculations

(2014) Long-Hua Li et al.   PHYSICAL REVIEW B

Enhanced thermoelectric performance of phosphorene by strain-induced band convergence

(2014) H. Y. Lv et al.   PHYSICAL REVIEW B

Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene

(2014) Xihong Peng et al.   PHYSICAL REVIEW B

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

(2014) Jingsi Qiao et al.   Nature Communications

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

High-Gain Phototransistors Based on a CVD MoS2Monolayer

(2013) Wenjing Zhang et al.   ADVANCED MATERIALS

Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting

(2013) Houlong L. Zhuang et al.   CHEMISTRY OF MATERIALS

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States

(2013) Diana Y. Qiu et al.   PHYSICAL REVIEW LETTERS

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

First-principles prediction of charge mobility in carbon and organic nanomaterials

(2012) Jinyang Xi et al.   Nanoscale

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Optoelectronic Properties in Monolayers of Hybridized Graphene and Hexagonal Boron Nitride

(2012) Marco Bernardi et al.   PHYSICAL REVIEW LETTERS

Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

(2012) Juqing Liu et al.   Small

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

(2012) Andres Castellanos-Gomez et al.   Nanoscale Research Letters

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures

(2011) Jack Deslippe et al.   COMPUTER PHYSICS COMMUNICATIONS

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Quasiparticle energies and excitonic effects of the two-dimensional carbon allotrope graphdiyne: Theory and experiment

(2011) Guangfu Luo et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Graphene: The New Two-Dimensional Nanomaterial

(2009) C. N. R. Rao et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering

(2009) F. Guinea et al.   Nature Physics

Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations

(2009) H. Şahin et al.   PHYSICAL REVIEW B

Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

(2009) S. Cahangirov et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening

(2008) Zhen Hua Ni et al.   ACS Nano

Band structure engineering of graphene by strain: First-principles calculations

(2008) Gui Gui et al.   PHYSICAL REVIEW B