Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Single-Layer Ag2S: A Two-Dimensional Bidirectional Auxetic Semiconductor

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Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

(2019) Jie Yang et al.   Advanced Electronic Materials

Unusual Electronic Transitions in Two-dimensional Layered SnSb2Te4 Driven by Electronic State Rehybridization

(2019) Wenhan Zhou et al.   Physical Review Applied

Robust two-dimensional topological insulators in derivatives of group-VA oxides with large band gap: Tunable quantum spin Hall states

(2019) Wenhan Zhou et al.   Applied Materials Today

QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

(2019) Søren Smidstrup et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Recent progress in 2D group-VA semiconductors: from theory to experiment

(2018) Shengli Zhang et al.   CHEMICAL SOCIETY REVIEWS

PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices

(2018) AbdulAziz AlMutairi et al.   IEEE ELECTRON DEVICE LETTERS

First-Principles Simulations of FETs Based on Two-Dimensional InSe

(2018) Enrique G. Marin et al.   IEEE ELECTRON DEVICE LETTERS

2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges

(2018) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

(2018) Ruge Quhe et al.   Physical Review Applied

Phonon-Limited Mobility in n-Type Few-Layer InSe Devices From First Principles

(2018) Pengying Chang et al.   IEEE ELECTRON DEVICE LETTERS

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator

(2017) Shengli Zhang et al.   NANO LETTERS

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

(2017) Jinxiong Wu et al.   Nature Nanotechnology

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

(2017) Mingsheng Long et al.   Science Advances

Performance of arsenene and antimonene double-gate MOSFETs from first principles

(2016) Giovanni Pizzi et al.   Nature Communications

A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm 2 V −1 s −1

(2016) Meiqiu Xie et al.   Nano Energy

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

(2015) Bilu Liu et al.   ADVANCED MATERIALS

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

(2015) Shengli Zhang et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ballistic Transport in Monolayer Black Phosphorus Transistors

(2014) Fei Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Erratum: Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

(2014) Jingsi Qiao et al.   Nature Communications

Single-layer MoS2 transistors

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