Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN
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Title
Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional
BiN
Authors
Keywords
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Journal
Physical Review Applied
Volume 13, Issue 4, Pages -
Publisher
American Physical Society (APS)
Online
2020-04-28
DOI
10.1103/physrevapplied.13.044066
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