High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
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Title
High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
Authors
Keywords
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Journal
Scientific Reports
Volume 5, Issue 1, Pages -
Publisher
Springer Nature
Online
2015-06-01
DOI
10.1038/srep10699
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