Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

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Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

(2020) Seungho Kim et al.   Nature Nanotechnology

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

(2020) Xiaotian Sun et al.   ACS Applied Materials & Interfaces

Liquid metal-based synthesis of high performance monolayer SnS piezoelectric nanogenerators

(2020) Hareem Khan et al.   Nature Communications

The concept of electrostatic doping and related devices

(2019) Sorin Cristoloveanu et al.   SOLID-STATE ELECTRONICS

Sub-10 nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes as an Evaporating Mask

(2019) Xiaoyang Xiao et al.   ACS Applied Materials & Interfaces

Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents

(2019) Peng Wu et al.   IEEE ELECTRON DEVICE LETTERS

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

(2019) Giovanni V. Resta et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Impact of electrostatic doping level on the dissipative transport in graphene nanoribbons tunnel field-effect transistors

(2019) Weixiang Zhang et al.   CARBON

QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

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Characterization of electron-beam deposited SnS films: Processing, properties, and ohmic contacts

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High-performance sub-10-nm monolayer black phosphorene tunneling transistors

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Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures

(2018) Jiwon Chang   Nanoscale

Growth of Large-Area SnS Films with Oriented 2D SnS Layers for Energy-Efficient Broadband Optoelectronics

(2018) Malkeshkumar Patel et al.   ADVANCED FUNCTIONAL MATERIALS

Sub-10 nm Vertical Tunneling Transistors based on Layered Black Phosphorene Homojunction

(2018) Hong Li et al.   APPLIED SURFACE SCIENCE

Sub-5 nm monolayer black phosphorene tunneling transistors

(2018) Hong Li et al.   NANOTECHNOLOGY

Bandgap modulated phosphorene based gate drain underlap double-gate TFET

(2018) Md. Abdullah-Al-Kaiser et al.   AIP Advances

Complementary Black Phosphorus Tunneling Field-Effect Transistors

(2018) Peng Wu et al.   ACS Nano

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

(2017) Fan W. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Electrostatic Doping in Semiconductor Devices

(2017) Gaurav Gupta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A reconfigurable silicon-on-insulator diode with tunable electrostatic doping

(2017) Sorin Cristoloveanu et al.   JOURNAL OF APPLIED PHYSICS

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

Wafer-scale production of vertical SnS multilayers for high-performing photoelectric devices

(2017) Malkeshkumar Patel et al.   Nanoscale

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor

(2017) Xiao Yan et al.   Small

Performance Projections for a Reconfigurable Tunnel NanoFET

(2017) Stefan Blawid et al.   IEEE Journal of the Electron Devices Society

Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

(2017) Jenifer R. Hajzus et al.   Nanoscale

Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

(2016) Ali Saeidi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors

(2016) Fei Liu et al.   Nanoscale

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

(2016) Sukrit Sucharitakul et al.   Nanoscale

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Theoretical study of phosphorene tunneling field effect transistors

(2015) Jiwon Chang et al.   APPLIED PHYSICS LETTERS

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Asymptotic Description of the Time and Temperature Hysteresis in the Framework of Landau-Khalatnikov Equation

(2014) A. Starkov et al.   FERROELECTRICS

Electrostatic Doping—Controlling the Properties of Carbon-Based FETs With Gates

(2014) J. Knoch et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

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