Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

(2011) Xuli Ding et al.   CARBON

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

(2011) Zheng Liu et al.   NANO LETTERS

Tunable Band Gaps in Bilayer Graphene−BN Heterostructures

(2011) Ashwin Ramasubramaniam et al.   NANO LETTERS

Tunable Bandgap in Silicene and Germanene

(2011) Zeyuan Ni et al.   NANO LETTERS

Layer-by-Layer Removal of Graphene for Device Patterning

(2011) A. Dimiev et al.   SCIENCE

Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

(2010) Cameron Bjelkevig et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Controlling Energy Gap of Bilayer Graphene by Strain

(2010) Seon-Myeong Choi et al.   NANO LETTERS

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

(2010) Fengnian Xia et al.   NANO LETTERS

Infrared and Raman spectra of AA-stacking bilayer graphene

(2010) Yuehua Xu et al.   NANOTECHNOLOGY

Bandgap opening in graphene induced by patterned hydrogen adsorption

(2010) Richard Balog et al.   NATURE MATERIALS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Graphene nanomesh

(2010) Jingwei Bai et al.   Nature Nanotechnology

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Reversible modifications of linear dispersion: Graphene between boron nitride monolayers

(2010) J. Sławińska et al.   PHYSICAL REVIEW B

Energy gap tuning in graphene on hexagonal boron nitride bilayer system

(2010) J. Sławińska et al.   PHYSICAL REVIEW B

Electron properties of fluorinated single-layer graphene transistors

(2010) F. Withers et al.   PHYSICAL REVIEW B

Effects of strain on electronic properties of graphene

(2010) Seon-Myeong Choi et al.   PHYSICAL REVIEW B

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

(2010) D. Usachov et al.   PHYSICAL REVIEW B

Strong Charge-Transfer Excitonic Effects and the Bose-Einstein Exciton Condensate in Graphane

(2010) Pierluigi Cudazzo et al.   PHYSICAL REVIEW LETTERS

ABINIT: First-principles approach to material and nanosystem properties

(2009) X. Gonze et al.   COMPUTER PHYSICS COMMUNICATIONS

Direct observation of a widely tunable bandgap in bilayer graphene

(2009) Yuanbo Zhang et al.   NATURE

Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene

(2009) Li Yang et al.   PHYSICAL REVIEW LETTERS

Approaching ballistic transport in suspended graphene

(2008) Xu Du et al.   Nature Nanotechnology

AccurateGWself-energies in a plane-wave basis using only a few empty states: Towards large systems

(2008) Fabien Bruneval et al.   PHYSICAL REVIEW B

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

(2008) Xinran Wang et al.   PHYSICAL REVIEW LETTERS

Implementation of the projector augmented-wave method in the ABINIT code: Application to the study of iron under pressure

(2007) Marc Torrent et al.   COMPUTATIONAL MATERIALS SCIENCE