High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Published 2014 View Full Article

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Title
High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Authors
Keywords
-
Journal
NANO LETTERS
Volume 14, Issue 6, Pages 3594-3601
Publisher
American Chemical Society (ACS)
Online
2014-05-20
DOI
10.1021/nl501275p

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