Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 117, Issue 41, Pages 21597-21602Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp4080465
Keywords
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Funding
- NSFCQ [cstc2012jjB0006]
- SRFDP [20110191110034, 20120191120039]
- NSFC [11204388]
- Chongqing University
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Electronic and transport properties of Bi2O2Se under strain are calculated using Tran-Blaha modified Becke-Johnson (TB-mBJGGA) potential and semiclassical Boltzmann transport theories. The electronic band gap decreases with tensile and compressive in-plane strain. We predict that the n-type Seebeck coefficient can be increased under compressive in-plane strain, while the p-type Seebeck coefficient can be increased under tensile in-plane strain. Further, the power factor of n-type doping Bi2O2Se can be increased under compressive in-plane strain, while that of p-type doping Bi2O2Se can be increased under tensile in-plane strain. For p-type doping Bi2O2Se, large thermoelectric figure of merit (ZT approximate to 1.42) could be obtained under tensile strain (2.3%) at 800 K. Moreover, a higher ZT approximate to 1.76 could be achieved along the ZZ direction. This study demonstrates that the electronic and thermoelectric properties can be controlled by strain engineering in thermoelectric material.
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