Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

Atomistic full-band simulations of monolayer MoS2 transistors

(2013) Jiwon Chang et al.   APPLIED PHYSICS LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

(2012) Hema C. P. Movva et al.   APPLIED PHYSICS LETTERS

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

(2012) David Jiménez   APPLIED PHYSICS LETTERS

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

(2012) Khairul Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW LETTERS

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Controlled Chlorine Plasma Reaction for Noninvasive Graphene Doping

(2011) Justin Wu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Revisiting magnetic coupling in transition-metal-benzene complexes with maximally localized Wannier functions

(2009) Hongming Weng et al.   PHYSICAL REVIEW B

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B