Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

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Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

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Simulation of junctionless Si nanowire transistors with 3 nm gate length

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Nanowire transistors without junctions

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Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

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Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

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