Physical and chemical mechanisms in oxide-based resistance random access memory

Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory

(2015) Xiaonan Yang et al.   IEEE ELECTRON DEVICE LETTERS

All-Metal-Nitride RRAM Devices

(2015) Zhiping Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

(2014) Cong Ye et al.   Applied Physics Express

Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

(2014) Hsin-lu Chen et al.   APPLIED PHYSICS LETTERS

Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

(2014) Kuan-Hsien Liu et al.   APPLIED PHYSICS LETTERS

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

(2014) Jyun-Yu Tsai et al.   APPLIED PHYSICS LETTERS

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

(2014) Szu-Han Ho et al.   APPLIED PHYSICS LETTERS

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

(2014) Tian-Jian Chu et al.   APPLIED PHYSICS LETTERS

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

(2014) Kuan-Hsien Liu et al.   APPLIED PHYSICS LETTERS

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

(2014) Yi-Jiun Chen et al.   IEEE ELECTRON DEVICE LETTERS

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

(2014)   IEEE ELECTRON DEVICE LETTERS

The Role of Ti Capping Layer in HfOx-Based RRAM Devices

(2014) Zheng Fang et al.   IEEE ELECTRON DEVICE LETTERS

Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps

(2014) Ling Li et al.   IEEE ELECTRON DEVICE LETTERS

Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

(2014) Xuan Huang et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

(2014) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

(2014) Hongtao Liu et al.   IEEE ELECTRON DEVICE LETTERS

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

(2014) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

(2014) Geng-Wei Chang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrahigh Sensitivity Self-Amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior

(2014) Hua-Mao Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

(2014) Kuan-Hsien Liu et al.   JOURNAL OF APPLIED PHYSICS

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

(2014) Chi-Chou Lin et al.   JOURNAL OF APPLIED PHYSICS

Thermoelectric Seebeck effect in oxide-based resistive switching memory

(2014) Ming Wang et al.   Nature Communications

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

(2014) Yi-Jiun Chen et al.   Nanoscale Research Letters

Transferable and Flexible Label-Like Macromolecular Memory on Arbitrary Substrates with High Performance and a Facile Methodology

(2013) Ying-Chih Lai et al.   ADVANCED MATERIALS

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

(2013) Szu-Han Ho et al.   APPLIED PHYSICS LETTERS

Performance and characteristics of double layer porous silicon oxide resistance random access memory

(2013) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

(2013) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

(2013) Ming-Yen Tsai et al.   APPLIED PHYSICS LETTERS

Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

(2013) Kai-Huang Chen et al.   APPLIED PHYSICS LETTERS

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

(2013) Yu-Ting Su et al.   APPLIED PHYSICS LETTERS

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

(2013) Jen-Wei Huang et al.   APPLIED PHYSICS LETTERS

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

(2013) Ching-Hui Hsu et al.   APPLIED PHYSICS LETTERS

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

(2013) Ming-Yen Tsai et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Electrical Performance Enhancement of Al–Zn-Sn–O Thin Film Transistor by Supercritical Fluid Treatment

(2013) Li-Feng Teng et al.   IEEE ELECTRON DEVICE LETTERS

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

(2013) Tien-Yu Hsieh et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

(2013) Hung-Bin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{Ni/GeO}_{x}\hbox{/TiO}_{y}\hbox{/TaN}$ RRAM on Flexible Substrate With Excellent Resistance Distribution

(2013) K. I. Chou et al.   IEEE ELECTRON DEVICE LETTERS

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

(2013) Haitao Sun et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Nanometer-Scale ${\rm HfO}_{x}$ RRAM

(2013) Zhiping Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure

(2013) Yu-Ting Chen et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

(2013) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

(2013) Jyun-Yu Tsai et al.   JOURNAL OF APPLIED PHYSICS

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2structure resistance random access memory

(2013) Rui Zhang et al.   JOURNAL OF APPLIED PHYSICS

Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment

(2013) Jhe-Ciou Jhu et al.   JOURNAL OF APPLIED PHYSICS

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   JOURNAL OF SUPERCRITICAL FLUIDS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Quantum Conductance in Silicon Oxide Resistive Memory Devices

(2013) A. Mehonic et al.   Scientific Reports

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

(2013) Rui Zhang et al.   Nanoscale Research Letters

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

(2013) Kuan-Chang Chang et al.   Nanoscale Research Letters

ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

(2012) Chi-Hsin Huang et al.   ACS Nano

Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress

(2012) Geng-Wei Chang et al.   APPLIED PHYSICS LETTERS

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

(2012) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

(2012) Yang-Shun Fan et al.   APPLIED PHYSICS LETTERS

Silicon introduced effect on resistive switching characteristics of WOX thin films

(2012) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device

(2012) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors

(2012) Geng-Wei Chang et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors

(2012) Tien-Yu Hsieh et al.   IEEE ELECTRON DEVICE LETTERS

Analysis and modeling of resistive switching statistics

(2012) Shibing Long et al.   JOURNAL OF APPLIED PHYSICS

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

The resistive switching characteristics in TaON films for nonvolatile memory applications

(2012) Min-Chen Chen et al.   THIN SOLID FILMS

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

(2011) Hsueh-Chih Tseng et al.   APPLIED PHYSICS LETTERS

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

(2011) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

(2011) Min-Feng Hung et al.   APPLIED PHYSICS LETTERS

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

(2011) Wan-Fang Chung et al.   APPLIED PHYSICS LETTERS

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

(2011) Chih-Hao Dai et al.   APPLIED PHYSICS LETTERS

Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

(2011) Chih-Hao Dai et al.   APPLIED PHYSICS LETTERS

Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications

(2011) Yong-En Syu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

(2011) Sheng-Yao Huang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

(2011) Min-Chen Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The Effect of Silicon Oxide Based RRAM with Tin Doping

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

(2011) Chih-Hao Dai et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of supercritical water oxidation for detoxification of waste organic solvent in university based on life cycle assessment

(2011) Yasunori Kikuchi et al.   JOURNAL OF HAZARDOUS MATERIALS

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

(2011) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Bipolar resistive switching of chromium oxide for resistive random access memory

(2011) Shih-Cheng Chen et al.   SOLID-STATE ELECTRONICS

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

(2011) Sheng-Yao Huang et al.   SOLID-STATE ELECTRONICS

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

(2011) Geng-Wei Chang et al.   THIN SOLID FILMS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

(2010) Yu-Chun Chen et al.   APPLIED PHYSICS LETTERS

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film

(2010) Po-Chun Yang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

(2010) Yu-Ting Tsai et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of H[sub 2]O Dipole on Subthreshold Swing of Amorphous Indium–Gallium–Zinc-Oxide Thin Film Transistors

(2010) Wan-Fang Chung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Structural evolution during the reduction of chemically derived graphene oxide

(2010) Akbar Bagri et al.   Nature Chemistry

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors

(2009) Po-Tsun Liu et al.   APPLIED PHYSICS LETTERS

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

(2009) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

(2009) Yingtao Li et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

(2009) Te-Yu Wei et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment

(2009) Min-Chen Chen et al.   SURFACE & COATINGS TECHNOLOGY

Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

(2008) C. H. Chen et al.   APPLIED PHYSICS LETTERS

Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

(2008) Wei-Ren Chen et al.   APPLIED PHYSICS LETTERS

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Scaling behaviors of reset voltages and currents in unipolar resistance switching

(2008) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS

A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment

(2008) Chih-Tsung Tsai et al.   JOURNAL OF APPLIED PHYSICS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE