Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Title
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 1, Pages 012103
Publisher
AIP Publishing
Online
2013-01-04
DOI
10.1063/1.4773479

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