Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory

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Title
Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 1, Pages 26-28
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-11-05
DOI
10.1109/led.2014.2367104

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