Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

(2011) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

(2010) Kou-Chen Liu et al.   MICROELECTRONICS RELIABILITY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

(2009) Xun Cao et al.   JOURNAL OF APPLIED PHYSICS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Physical and electrical characteristics of a high-k Yb2O3 gate dielectric

(2008) Tung-Ming Pan et al.   APPLIED SURFACE SCIENCE