Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices

(2009) Lei Shi et al.   Applied Physics Express

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

(2009) Ayumu Sato et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3

(2009) Haiyang Peng et al.   APPLIED PHYSICS LETTERS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today