Analysis and modeling of resistive switching statistics

Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

(2011) Shibing Long et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$/HfON/TaN RRAM

(2011) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Reset Statistics of NiO-Based Resistive Switching Memories

(2011) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

(2011) D. Ielmini et al.   JOURNAL OF APPLIED PHYSICS

A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides

(2011) Santi Tous et al.   JOURNAL OF APPLIED PHYSICS

Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

(2011) C. Martínez-Domingo et al.   MICROELECTRONIC ENGINEERING

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

(2011) Da-Shan Shang et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

(2011) A. Conde et al.   SOLID-STATE ELECTRONICS

Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

(2011) C. Dumas et al.   THIN SOLID FILMS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

(2010) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Scaling Theory for Unipolar Resistance Switching

(2010) J. S. Lee et al.   PHYSICAL REVIEW LETTERS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

(2010) F. Nardi et al.   SOLID-STATE ELECTRONICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

(2009) N.C. Su et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

A Compact Model for Oxide Breakdown Failure Distribution in Ultrathin Oxides Showing Progressive Breakdown

(2008) Santi Tous et al.   IEEE ELECTRON DEVICE LETTERS

Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

(2008) H. L. Lu et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

(2008) S. Spiga et al.   MICROELECTRONIC ENGINEERING

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B