标题
Physical and chemical mechanisms in oxide-based resistance random access memory
作者
关键词
RRAM, Silicon oxide, Graphene oxide, Physical mechanism, Supercritical fluids
出版物
Nanoscale Research Letters
Volume 10, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-03-11
DOI
10.1186/s11671-015-0740-7
参考文献
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